MASK-INTEGRATED SURFACE PROTECTIVE TAPE, AND METHOD OF PRODUCING A SEMICONDUCTOR CHIP USING THE SAME

MASK-INTEGRATED SURFACE PROTECTIVE TAPE, AND METHOD OF PRODUCING A SEMICONDUCTOR CHIP USING THE SAME

[Problem] To provide a mask-integrated surface protective tape that eliminates the need for a mask formation by a photolithography process in the production of a semiconductor chip using a plasma dicing method, and that exhibits an excellent performance in each of the production steps of the semicon...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Tomoaki UCHIYAMA, Akira AKUTSU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LAYERED PRODUCTS
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
TRANSPORTING
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Beschreibung
Zusammenfassung:[Problem] To provide a mask-integrated surface protective tape that eliminates the need for a mask formation by a photolithography process in the production of a semiconductor chip using a plasma dicing method, and that exhibits an excellent performance in each of the production steps of the semiconductor chip, and also that is excellent in both operability and activity; and to provide a method of producing a semiconductor chip. [Means to solve] A mask-integrated surface protective tape, which has at least a substrate film and a mask material layer, wherein the mask material layer is provided directly on the substrate film, or is provided on the substrate film through a temporary-adhesive layer, and wherein a parallel ray transmittance of the mask material layer at a wavelength region of 355 nm is 30% or less; and a method of producing a semiconductor chip.