PURIFICATION METHOD AND PURIFICATION APPARATUS FOR OFF-GAS

The present invention relates to a purification method and a purification apparatus for off-gas. More specifically, the present invention relates to a purification method and a purification apparatus for off-gas, capable of lowering the concentration of hydrogen chloride and separating high-purity h...

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Bibliographische Detailangaben
Hauptverfasser:	AHN, Gui Ryong, PARK, Jea Sung, LEE, Won Ik, KIM, Gil Ho, KIM, Sang ah, KIM, Bo Kyung
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SEPARATION SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention relates to a purification method and a purification apparatus for off-gas. More specifically, the present invention relates to a purification method and a purification apparatus for off-gas, capable of lowering the concentration of hydrogen chloride and separating high-purity hydrogen from the off-gas, which is discharged after performing a polysilicon deposition process by a chemical vapor deposition reaction. (Figure 2)