FEPT-C-BASED SPUTTERING TARGET

Through the present invention, a thin film containing an FePt-based alloy and carbon, the thin film being capable of being used as a magnetic recording medium, is enabled to be formed using one target, and amount of particles is enabled to be reduced. An FePt-C-based sputtering target containing Fe,...

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Bibliographische Detailangaben
Hauptverfasser:	GOTO, Yasuyuki, NISHIURA, Masahiro, YAMAMOTO, Takamichi, KUSHIBIKI, Ryousuke
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS CASTING CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAKING METALLIC POWDER MANUFACTURE OF ARTICLES FROM METALLIC POWDER METALLURGY PERFORMING OPERATIONS PHYSICS POWDER METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS WORKING METALLIC POWDER
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Beschreibung
Zusammenfassung:	Through the present invention, a thin film containing an FePt-based alloy and carbon, the thin film being capable of being used as a magnetic recording medium, is enabled to be formed using one target, and amount of particles is enabled to be reduced. An FePt-C-based sputtering target containing Fe, Pt, and C, wherein the FePt-C-based sputtering target has a structure in which a C phase substantially being C is dispersed in an FePt-based alloy phase containing 33 mol% or more and 60 mol% or less of Pt with the balance substantially being Fe, an average value of the size indices a of the C phase is 4.0 ?m or more and 9.0 ?m or less, and an average value of the nonspherical indices b of the C phase is 3.0 or more.