SILICON NANOWIRE BASED FILTER AND METHOD OF FABRICATING THEREOF
The filter device (100) of the present invention comprises at least one channel (60) or trench structure formed within a substrate (20) for accommodating or supporting a predetermined amount of silicon nanowires (40) which are provided by means of in-situ growth within said channel (60). These nanow...
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| creator | TEH AUN SHIH SITI AISHAH MOHAMAD BADARUDDIN BIEN CHIA SHENG |
| description | The filter device (100) of the present invention comprises at least one channel (60) or trench structure formed within a substrate (20) for accommodating or supporting a predetermined amount of silicon nanowires (40) which are provided by means of in-situ growth within said channel (60). These nanowires are grown in a free standing manner within the trench structure of channel (60). An encapsulation layer (80) primarily to confine the trench structure which functions (60) is further disposed therein. A catalyst permits the growth of nanowires, whereby the catalyst may be deposited within the channel by means of physical vapour deposition, chemically or by means of self assembly. |
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| subjects | INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PHYSICS SEPARATION TESTING TRANSPORTING |
| title | SILICON NANOWIRE BASED FILTER AND METHOD OF FABRICATING THEREOF |
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