SILICON NANOWIRE BASED FILTER AND METHOD OF FABRICATING THEREOF

SILICON NANOWIRE BASED FILTER AND METHOD OF FABRICATING THEREOF

The filter device (100) of the present invention comprises at least one channel (60) or trench structure formed within a substrate (20) for accommodating or supporting a predetermined amount of silicon nanowires (40) which are provided by means of in-situ growth within said channel (60). These nanow...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TEH AUN SHIH, SITI AISHAH MOHAMAD BADARUDDIN, BIEN CHIA SHENG
Format: Patent
Sprache:eng
Schlagworte:
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PERFORMING OPERATIONS
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
PHYSICS
SEPARATION
TESTING
TRANSPORTING
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Beschreibung
Zusammenfassung:The filter device (100) of the present invention comprises at least one channel (60) or trench structure formed within a substrate (20) for accommodating or supporting a predetermined amount of silicon nanowires (40) which are provided by means of in-situ growth within said channel (60). These nanowires are grown in a free standing manner within the trench structure of channel (60). An encapsulation layer (80) primarily to confine the trench structure which functions (60) is further disposed therein. A catalyst permits the growth of nanowires, whereby the catalyst may be deposited within the channel by means of physical vapour deposition, chemically or by means of self assembly.