HIGH-THROUGHPUT THERMAL PROCESSING METHODS FOR PRODUCING HIGH-EFFICIENCY CRYSTALLINE SILICON SOLAR CELLS

HIGH-THROUGHPUT THERMAL PROCESSING METHODS FOR PRODUCING HIGH-EFFICIENCY CRYSTALLINE SILICON SOLAR CELLS

A method for thermal processing of a silicon substrate wherein first a silicon substrate is heated to an idle load temperature in the range of approximately 700? to 900?C. The silicon substrate is then heated to a temperature in the range of approximately 975? to 1200?C in less than approximately 20...

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Bibliographische Detailangaben
Hauptverfasser: DESHPANDE, Anand, ISLAM, Mohammed, KAPUR, Pawan, MOSLEHI, Mehrdad, M, SEUTTER, Sean, M
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method for thermal processing of a silicon substrate wherein first a silicon substrate is heated to an idle load temperature in the range of approximately 700? to 900?C. The silicon substrate is then heated to a temperature in the range of approximately 975? to 1200?C in less than approximately 20 minutes. After thermal processing, the silicon substrate is cooled to an idle unload temperature in the range of approximately 700? to 900?C in less than approximately 20 minutes. (Figure 6)