SELECTIVE GATE SPACERS FOR SEMICONDUCTOR DEVICES

SELECTIVE GATE SPACERS FOR SEMICONDUCTOR DEVICES

Techniques related to forming selective gate spacers for semiconductor devices and transistor structures and devices formed using such techniques are discussed. Such techniques include forming a blocking material (108) on a semiconductor fin (104), disposing a gate (110) having a different surface c...

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Bibliographische Detailangaben
Hauptverfasser: CLENDENNING, Scott B, KLOSTER, Grant M, MITAN, Martin M, GSTREIN, Florian, LIAO, Szuya S, HOURANI, Rami, ROMERO, Patricio E
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Techniques related to forming selective gate spacers for semiconductor devices and transistor structures and devices formed using such techniques are discussed. Such techniques include forming a blocking material (108) on a semiconductor fin (104), disposing a gate (110) having a different surface chemistry than the blocking material (108) on a portion of the blocking material (108), forming a selective conformal layer (112) on the gate (110) but not on a portion of the blocking material (108), and removing exposed portions of the blocking material (108). (Figure 1F)