SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

There are included a first conductivity-type first drift region (4) formed on a first main surface of a substrate (1), and a first conductivity-type second drift region (41) formed on the first main surface of the substrate (1), the second drift region formed to be reached to a deeper position of the substrate (1) than a position of the first drift region (4). There are further included a second conductivity-type well region in contact with the second drift region, a first conductivity-type source region formed to extend in a direction perpendicular to a surface of the well region, and a first conductivity-type drain region separated from the well region, the drain region formed to extend in a direction perpendicular to a surface of the first drift region. Since a flow path of electrons after passing through a channel can be widened, a resistance can be reduced.