PLASMA CVD DEVICE AND PLASMA CVD METHOD

The present invention is a plasma CVD device provided with a vacuum chamber, and a plasma CVD electrode unit and a substrate-holding mechanism inside the vacuum chamber. The plasma CVD electrode unit is provided with an anode, a cathode that Faces the anode at a distance, and a first gas supply nozzle for supplying gas so as to Pass through the plasma-generation space between the anode and cathode. The substrate-holding mechanism is disposed at a position where the gas passing through the plasma-generation space impinges. The length of the anode in the gas-supply Direction and the length of the cathode in the gas-supply direction are both longer than the distance between the anode and the cathode. Thus, a plasma CVD device that Makes it possible to increase gas decomposition efficiency and achieve high film deposition rate is provided.