METHOD FOR MANUFACTURING WAFER-LEVEL SEMICONDUCTOR PACKAGES

During the manufacture of a semiconductor package (60; 86), a semiconductor wafer (10) including a plurality of bond pads (12) on a surface of the wafer (10) is provided and the surface of the wafer (10) is covered with a dielectric material to form a dielectric layer (16; 68) over the bond pads (12). Portions of the dielectric layer (16; 68) corresponding to positions of the bond pads (12) are removed to form a plurality of wells (18; 70), wherein each well is configured to form a through-hole between top and bottom surfaces of the dielectric layer (16; 68) for exposing each bond pad. A conductive material is then deposited into the wells (18; 70) to form a conductive layer between the bond pads (12) and a top surface of the dielectric layer (16; 68). Thereafter, the semiconductor wafer (10) is singulated to form a plurality of semiconductor packages (60; 86).