SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device that is equipped with a semiconductor substrate (200), a composite metal film, and a detection terminal is provided. The composite metal film is formed on a surface or a back face of the semiconductor substrate (200), and has a first metal film (221), and a second metal film (...

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Bibliographische Detailangaben
1. Verfasser:	Yoshihito MIZUNO
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY MEASURING MEASURING QUANTITY OF HEAT MEASURING TEMPERATURE PHYSICS TESTING THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	A semiconductor device that is equipped with a semiconductor substrate (200), a composite metal film, and a detection terminal is provided. The composite metal film is formed on a surface or a back face of the semiconductor substrate (200), and has a first metal film (221), and a second metal film (222) that is joined to the first metal film (221) and is different in Seebeck coefficient from the first metal film (221). The detection terminal can detect a potential difference between the first metal film (221) and the second metal film (222).