METHOD FOR SUPPLYING SOURCE GAS FOR PRODUCING POLYCRYSTALLINE SILICON AND POLYCRYSTALLINE SILICON

In a method according to the present invention, an occurrence ratio of popcorn is suppressed by adjusting kinetic energy of a source gas supplied to a reaction furnace for producing polycrystalline silicon with a Siemens method (flow velocity and a supply amount of the source gas in source gas 1 o s...

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Bibliographische Detailangaben
Hauptverfasser: KUROSAWA Yasushi, NETSU Shigeyoshi
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:In a method according to the present invention, an occurrence ratio of popcorn is suppressed by adjusting kinetic energy of a source gas supplied to a reaction furnace for producing polycrystalline silicon with a Siemens method (flow velocity and a supply amount of the source gas in source gas 1 o supply nozzle ejection ports). Specifically, in performing deposition reaction f the polycrystalline silicon under a reaction pressure of 0.25 MPa to 0.9 MPa, when flow velocity of the source gas in gas supply ports of the source gas supply nozzles (9) is represented as u (m/sec), a source gas supply amount is represented as Q (kg/sec), and an inner volume of the reaction furnace (100) is represented as V (m3), values of u and Q of each of the source gas supply nozzles(9) are set such that a total "i.(Qxu2N) of values Qxu2N is equal to or larger than 2500 (kg/m-sec3). Fig. 1 to accompany abstract