HIGH PURITY Cu BONDING WIRE

[ISSUES TO BE SOLVED] TO PROVIDE HIGH PURITY CU ALLOY BONDING WIRE, WHICH HAS HIGH RECRYSTALLIZATION TEMPERATURE, AND IS EASY TO DICE-DRAW AT ROOM TEMPERATURE, AND HARDNESS OF INITIAL BALL OF IT IS SMALL, AND DOES NOT MAKE CHIP CRACKS. [SOLUTION MEANS] ADDING TRACE OF P INTO HIGH PURITY CU MORE THAN...

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Hauptverfasser:	OKAZAKI JUNICHI, KUWAHARA TAKESHI, YAMASHITA TSUTOMU
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS METALLURGY SEMICONDUCTOR DEVICES TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Zusammenfassung:	[ISSUES TO BE SOLVED] TO PROVIDE HIGH PURITY CU ALLOY BONDING WIRE, WHICH HAS HIGH RECRYSTALLIZATION TEMPERATURE, AND IS EASY TO DICE-DRAW AT ROOM TEMPERATURE, AND HARDNESS OF INITIAL BALL OF IT IS SMALL, AND DOES NOT MAKE CHIP CRACKS. [SOLUTION MEANS] ADDING TRACE OF P INTO HIGH PURITY CU MORE THAN 99.9985 WT % CU, RECRYSTALLIZATION TEMPERATURE IS HIGHER THAN HIGH PURITY CU MORE THAN 99.9999 WT % CU, AND HARDNESS OF INITIAL BALL OF BALL BONDING DECREASES. ABOVE CHARACTERISTICS IS ATTAINED BY ADDING 0.5 - 15 WT PPM OF P INTO HIGH PURITY CU MORE THAN 99.9985 WT % CU, MOREOVER, TOTAL AMOUNT OF IMPURITIES IS CONTROLLED LESS THAN AMOUNT OF P ABOVE MENTIONED. [REPRESENTATIVE