LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF

LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF THE PRESENT INVENTION DISCLOSES LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF. THE LED COMPRISES: A SUBSTRATE; AN EPITAXIAL LAYER, AN ACTIVE LAYER AND A CAPPING LAYER ARRANGED ON THE SUBSTRATE IN SEQUENCE; WHEREIN A PLURALITY OF BIFOCAL MICRO...

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Bibliographische Detailangaben
Hauptverfasser: XIAO, DEYUAN, CHANG, RICHARD RUGIN
Format: Patent
Sprache:eng
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Zusammenfassung:LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF THE PRESENT INVENTION DISCLOSES LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF. THE LED COMPRISES: A SUBSTRATE; AN EPITAXIAL LAYER, AN ACTIVE LAYER AND A CAPPING LAYER ARRANGED ON THE SUBSTRATE IN SEQUENCE; WHEREIN A PLURALITY OF BIFOCAL MICROLENS STRUCTURES ARE FORMED ON THE SURFACE OF THE SUBSTRATE AWAY FROM THE EPITAXIAL LAYER. WHEN THE LIGHT EMITTED FROM THE ACTIVE LAYER PASSES THROUGH THE SURFACES OF THE BIFOCAL MICROLENS STRUCTURES, THE INCIDENT ANGLE IS ALWAYS SMALLER THAN THE CRITICAL ANGLE OF TOTAL REFLECTION, THUS PREVENTING TOTAL REFLECTION AND MAKING SURE THAT MOST OF THE LIGHT PASS THROUGH THE SURFACES OF THE BIFOCAL MICROLENS STRUCTURES, IN THIS WAY IMPROVING EXTERNAL QUANTUM EFFICIENCY OF THE LED, AVOIDING THE RISE OF THE INTERNAL TEMPERATURE OF THE LED AND IMPROVING THE PERFORMANCE OFTHE LED. (FIG. 2)