APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON

APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON

RAW MATERIAL GAS SUPPLY NOZZLES 9 ARE ARRANGED WITHIN A VIRTUAL CONCENTRIC CIRCLE HAVING ITS CENTER AT THE CENTER OF A DISK-LIKE BASE PLATE 5 (HAVING AN AREA S HALF AS LARGE AS AN AREA S0 OF THE BASE PLATE 5). RAW MATERIAL GAS IS EJECTED AT A FLOW VELOCITY OF 150 M/SEC OR MORE INTO A BELL JAR 1 FROM...

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Bibliographische Detailangaben
Hauptverfasser: NETSU, SHIGEYOSHI, KUROSAWA, YASUSHI
Format: Patent
Sprache:eng
Schlagworte:
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Zusammenfassung:RAW MATERIAL GAS SUPPLY NOZZLES 9 ARE ARRANGED WITHIN A VIRTUAL CONCENTRIC CIRCLE HAVING ITS CENTER AT THE CENTER OF A DISK-LIKE BASE PLATE 5 (HAVING AN AREA S HALF AS LARGE AS AN AREA S0 OF THE BASE PLATE 5). RAW MATERIAL GAS IS EJECTED AT A FLOW VELOCITY OF 150 M/SEC OR MORE INTO A BELL JAR 1 FROM THE GAS SUPPLY NOZZLES 9. IN THE EXAMPLE SHOWN IN 3, IN ADDITION TO ONE GAS SUPPLY NOZZLE 9 PROVIDED IN A CENTER PORTION OF THE BASE PLATE 5, THREE GAS SUPPLY NOZZLES 9 ARE ARRANGED AT THE VERTEX POSITIONS OF A REGULAR TRIANGLE INSCRIBED IN A CIRCUMSCRIBED CIRCLE E HAVING ITS CENTER AT THE GAS SUPPLY NOZZLE 9 IN THE CENTER PORTION. WHEN THE GAS SUPPLY NOZZLES ARE ARRANGED AS DESCRIBED ABOVE, A SMOOTH CIRCULATING FLOW IS FORMED WITHIN A REACTOR. 3 TO A ACCOMPANY ABSTRAC