VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION OF A DOPED THIN FILM LAYER ON A SUBSTRATE
AN APPARATUS AND RELATED PROCESS ARE PROVIDED FOR VAPOR DEPOSITION OF A SUBLIMATED SOURCE MATERIAL AS A DOPED THIN FILM ON A PHOTOVOLTAIC (PV) MODULE SUBSTRATE. A RECEPTACLE IS DISPOSED WITHIN A VACUUM HEAD CHAMBER AND IS CONFIGURED FOR RECEIPT OF A SOURCE MATERIAL SUPPLIED FROM A FIRST FEED TUBE. A...
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creator | FELDMAN-PEABODY, SCOTT DANIEL PAVOL, MARK JEFFREY |
description | AN APPARATUS AND RELATED PROCESS ARE PROVIDED FOR VAPOR DEPOSITION OF A SUBLIMATED SOURCE MATERIAL AS A DOPED THIN FILM ON A PHOTOVOLTAIC (PV) MODULE SUBSTRATE. A RECEPTACLE IS DISPOSED WITHIN A VACUUM HEAD CHAMBER AND IS CONFIGURED FOR RECEIPT OF A SOURCE MATERIAL SUPPLIED FROM A FIRST FEED TUBE. A SECOND FEED TUBE CAN PROVIDE A DOPANT MATERIAL INTO THE DEPOSITION HEAD. A HEATED DISTRIBUTION MANIFOLD IS DISPOSED BELOW THE RECEPTACLE AND INCLUDES A PLURALITY OF PASSAGES DEFINED THERETHROUGH. THE RECEPTACLE IS INDIRECTLY HEATED BY THE DISTRIBUTION MANIFOLD TO A DEGREE SUFFICIENT TO SUBLIMATE SOURCE MATERIAL WITHIN THE RECEPTACLE. A DISTRIBUTION PLATE IS DISPOSED BELOW THE DISTRIBUTION MANIFOLD AND AT A DEFINED DISTANCE ABOVE A HORIZONTAL PLANE OF A SUBSTRATE CONVEYED THROUGH THE APPARATUS TO FURTHER DISTRIBUTE THE SUBLIMATED SOURCE MATERIAL PASSING THROUGH THE DISTRIBUTION MANIFOLD ONTO THE UPPER SURFACE OF THE UNDERLYING SUBSTRATE. |
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A DISTRIBUTION PLATE IS DISPOSED BELOW THE DISTRIBUTION MANIFOLD AND AT A DEFINED DISTANCE ABOVE A HORIZONTAL PLANE OF A SUBSTRATE CONVEYED THROUGH THE APPARATUS TO FURTHER DISTRIBUTE THE SUBLIMATED SOURCE MATERIAL PASSING THROUGH THE DISTRIBUTION MANIFOLD ONTO THE UPPER SURFACE OF THE UNDERLYING SUBSTRATE.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170331&DB=EPODOC&CC=MY&NR=161000A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170331&DB=EPODOC&CC=MY&NR=161000A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FELDMAN-PEABODY, SCOTT DANIEL</creatorcontrib><creatorcontrib>PAVOL, MARK JEFFREY</creatorcontrib><title>VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION OF A DOPED THIN FILM LAYER ON A SUBSTRATE</title><description>AN APPARATUS AND RELATED PROCESS ARE PROVIDED FOR VAPOR DEPOSITION OF A SUBLIMATED SOURCE MATERIAL AS A DOPED THIN FILM ON A PHOTOVOLTAIC (PV) MODULE SUBSTRATE. A RECEPTACLE IS DISPOSED WITHIN A VACUUM HEAD CHAMBER AND IS CONFIGURED FOR RECEIPT OF A SOURCE MATERIAL SUPPLIED FROM A FIRST FEED TUBE. A SECOND FEED TUBE CAN PROVIDE A DOPANT MATERIAL INTO THE DEPOSITION HEAD. A HEATED DISTRIBUTION MANIFOLD IS DISPOSED BELOW THE RECEPTACLE AND INCLUDES A PLURALITY OF PASSAGES DEFINED THERETHROUGH. THE RECEPTACLE IS INDIRECTLY HEATED BY THE DISTRIBUTION MANIFOLD TO A DEGREE SUFFICIENT TO SUBLIMATE SOURCE MATERIAL WITHIN THE RECEPTACLE. A DISTRIBUTION PLATE IS DISPOSED BELOW THE DISTRIBUTION MANIFOLD AND AT A DEFINED DISTANCE ABOVE A HORIZONTAL PLANE OF A SUBSTRATE CONVEYED THROUGH THE APPARATUS TO FURTHER DISTRIBUTE THE SUBLIMATED SOURCE MATERIAL PASSING THROUGH THE DISTRIBUTION MANIFOLD ONTO THE UPPER SURFACE OF THE UNDERLYING SUBSTRATE.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFzL0KwjAUhuEuDqLegpwbEFIE92NyQgNtTsiP0KmUEgcRLdT7xwgObk7f8D286-p2QcceFDkOJhq2gM6hx5gCoFXgPEsKAXRBkm00NnG5fjxrQFDsSEFsjAVt2g5a7MnDpwYhnUMsQdpWq-t4X_Luu5tqrynK5pDn55CXeZzyI7-Grq9PtRACj3_BG2ocNP8</recordid><startdate>20170331</startdate><enddate>20170331</enddate><creator>FELDMAN-PEABODY, SCOTT DANIEL</creator><creator>PAVOL, MARK JEFFREY</creator><scope>EVB</scope></search><sort><creationdate>20170331</creationdate><title>VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION OF A DOPED THIN FILM LAYER ON A SUBSTRATE</title><author>FELDMAN-PEABODY, SCOTT DANIEL ; PAVOL, MARK JEFFREY</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_MY161000A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>FELDMAN-PEABODY, SCOTT DANIEL</creatorcontrib><creatorcontrib>PAVOL, MARK JEFFREY</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FELDMAN-PEABODY, SCOTT DANIEL</au><au>PAVOL, MARK JEFFREY</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION OF A DOPED THIN FILM LAYER ON A SUBSTRATE</title><date>2017-03-31</date><risdate>2017</risdate><abstract>AN APPARATUS AND RELATED PROCESS ARE PROVIDED FOR VAPOR DEPOSITION OF A SUBLIMATED SOURCE MATERIAL AS A DOPED THIN FILM ON A PHOTOVOLTAIC (PV) MODULE SUBSTRATE. A RECEPTACLE IS DISPOSED WITHIN A VACUUM HEAD CHAMBER AND IS CONFIGURED FOR RECEIPT OF A SOURCE MATERIAL SUPPLIED FROM A FIRST FEED TUBE. A SECOND FEED TUBE CAN PROVIDE A DOPANT MATERIAL INTO THE DEPOSITION HEAD. A HEATED DISTRIBUTION MANIFOLD IS DISPOSED BELOW THE RECEPTACLE AND INCLUDES A PLURALITY OF PASSAGES DEFINED THERETHROUGH. THE RECEPTACLE IS INDIRECTLY HEATED BY THE DISTRIBUTION MANIFOLD TO A DEGREE SUFFICIENT TO SUBLIMATE SOURCE MATERIAL WITHIN THE RECEPTACLE. A DISTRIBUTION PLATE IS DISPOSED BELOW THE DISTRIBUTION MANIFOLD AND AT A DEFINED DISTANCE ABOVE A HORIZONTAL PLANE OF A SUBSTRATE CONVEYED THROUGH THE APPARATUS TO FURTHER DISTRIBUTE THE SUBLIMATED SOURCE MATERIAL PASSING THROUGH THE DISTRIBUTION MANIFOLD ONTO THE UPPER SURFACE OF THE UNDERLYING SUBSTRATE.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION OF A DOPED THIN FILM LAYER ON A SUBSTRATE |
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