SILICON NANOWIRE TRANSISTOR (SiNWT) AND PROCESS FOR FABRICATING THE SAME

SILICON NANOWIRE TRANSISTOR (SiNWT) AND PROCESS FOR FABRICATING THE SAME

THE PRESENT INVENTION PROVIDES A SILICON NANOWIRE TRANSISTOR FABRICATED ON A SILICON- ON-INSULATOR (SOI) WAFER, COMPRISING A SOURCE PAD, A DRAIN PAD, A LATERAL GATE PAD, AND A SILICON NANOWIRE AS CHANNEL. THE PRESENT INVENTION FURTHER PROVIDES A PROCESS FOR FABRICATING THE SILICON NANOWIRE TRANSISTO...

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Bibliographische Detailangaben
Hauptverfasser: YUSSOF WAHAB, AHMAD MAKARIMI ABDULLAH, SABAR DERITA HUTAGALUNG, LEW KAM CHEUNG, ZAINOVIA LOCKMAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OR TREATMENT THEREOF
NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS
NANOTECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
TRANSPORTING
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Zusammenfassung:THE PRESENT INVENTION PROVIDES A SILICON NANOWIRE TRANSISTOR FABRICATED ON A SILICON- ON-INSULATOR (SOI) WAFER, COMPRISING A SOURCE PAD, A DRAIN PAD, A LATERAL GATE PAD, AND A SILICON NANOWIRE AS CHANNEL. THE PRESENT INVENTION FURTHER PROVIDES A PROCESS FOR FABRICATING THE SILICON NANOWIRE TRANSISTOR, WHERE THE PROCESS COMPRISES PATTERNING BY LOCAL ANODIC OXIDATION USING ATOMIC FORCE MICROSCOPE (AFM) NANOLITHOGRAPHY AND TWO WET CHEMICAL ETCHING STEPS. FIG 9