METHOD FOR PRODUCING A SILICON INGOT

METHOD FOR PRODUCING A SILICON INGOT, COMPRISING THE FOLLOWING STEPS: PROVIDING A CONTAINER (3) TO RECEIVE A SILICON MELT (2), PROVIDING A TEMPERATURE CONTROL DEVICE (9) TO CONTROL THE TEMPERATURE OF THE SILICON MELT (2) IN THE CONTAINER (3), ARRANGING RAW MATERIAL IN THE CONTAINER (3) COMPRISING SI...

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Hauptverfasser:	ANDREAS KRAUSE, MARK HOLLATZ, ARMIN MÜLLER, GERD FISCHER, BERNHARD FREUDENBERG, JOSEF STENZENBERGER
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CASTING CASTING OF METALS CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES CHEMISTRY CRYSTAL GROWTH METALLURGY PERFORMING OPERATIONS POWDER METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	METHOD FOR PRODUCING A SILICON INGOT, COMPRISING THE FOLLOWING STEPS: PROVIDING A CONTAINER (3) TO RECEIVE A SILICON MELT (2), PROVIDING A TEMPERATURE CONTROL DEVICE (9) TO CONTROL THE TEMPERATURE OF THE SILICON MELT (2) IN THE CONTAINER (3), ARRANGING RAW MATERIAL IN THE CONTAINER (3) COMPRISING SILICON AND AT LEAST ONE NUCLEATION AGENT TO ASSIST A HETEROGENEOUS NUCLEATION IN THE SILICON MELT (2), AND CONTROL OF THE TEMPERATURE IN THE CONTAINER (3) FOR THE DIRECTED SOLIDIFICATION OF THE SILICON MELT (2), THE NUCLEATION AGENT COMPRISING NANOSCALE PARTICLES.