NOTCH STOP PULSING PROCESS FOR PLASMA PROCESSING SYSTEM

A METHOD FOR ETCHING A SUBSTRATE (300) HAVING A SILICON LAYER (306) IN A PLASMA PROCESSING CHAMBER HAVING A BOTTOM ELECTRODE ON WHICH THE SUBSTRATE IS DISPOSED ON DURING ETCHING. THE METHOD INCLUDES PERFORMING A MAIN ETCH STEP (204). THE METHOD ALSO INCLUDES TERMINATING MAIN ETCH STEP WHEN A PREDEFI...

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Bibliographische Detailangaben
Hauptverfasser:	COFER, ALFERD, PANDHUMSOPORN, TAMARAK
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS
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Beschreibung
Zusammenfassung:	A METHOD FOR ETCHING A SUBSTRATE (300) HAVING A SILICON LAYER (306) IN A PLASMA PROCESSING CHAMBER HAVING A BOTTOM ELECTRODE ON WHICH THE SUBSTRATE IS DISPOSED ON DURING ETCHING. THE METHOD INCLUDES PERFORMING A MAIN ETCH STEP (204). THE METHOD ALSO INCLUDES TERMINATING MAIN ETCH STEP WHEN A PREDEFINED ETCH DEPTH OF AT LEAST 70 PERCENT OF THICKNESS INTO SILICON LAYER IS ACHIEVED. THE METHOD FURTHER INCLUDES PERFORMING AN OVERETCH STEP (206). THE OVERETCH STEP INCLUDING A FIRST PROCESS STEP AND A SECOND PROCESS STEP. FIRST PROCESS STEP IS PERFORMED USING A FIRST BOTTOM POWER LEVEL APPLIED TO BOTTOM ELECTRODE. SECOND PROCESS STEP IS PERFORMED USING A SECOND BOTTOM POWER LEVEL APPLIED TO BOTTOM ELECTRODE THAT IS LOWER THAN FIRST BOTTOM POWER LEVEL. FIRST PROCESS AND SECOND PROCESS STEPS ARE ALTERNATELY PERFORMED A PLURALITY OF TIMES. THE METHOD YET ALSO INCLUDES TERMINATING OVERETCH STEP AFTER SILICON LAYER IS ETCHED THROUGH.