METHOD TO IMPROVE PROFILE CONTROL AND N/P LOADING IN DUAL DOPED GATE APPLICATIONS

METHOD TO IMPROVE PROFILE CONTROL AND N/P LOADING IN DUAL DOPED GATE APPLICATIONS

A METHOD FOR ETCHING A POLYSILICON GATE STRUCTURE IN A PLASMA ETCH CHAMBER IS PROVIDED. THE METHOD INITIATES WITH DEFINING A PATTERN PROTECTING A POLYSILICON FILM TO BE ETCHED.THEN, A PLASMA IS GENERATED. NEXT, SUBSTANTIALLY ALL OF THE POLYSILICON FILM THAT IS UNPROTECTED IS ETCHED. THEN, A SILICON...

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Bibliographische Detailangaben
Hauptverfasser: FRANK LIN, VAHID VAHEDI, THOMAS A. KAMP, HELENE DEL PUPPO, ALAN J. MILLER, CHRIS LEE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A METHOD FOR ETCHING A POLYSILICON GATE STRUCTURE IN A PLASMA ETCH CHAMBER IS PROVIDED. THE METHOD INITIATES WITH DEFINING A PATTERN PROTECTING A POLYSILICON FILM TO BE ETCHED.THEN, A PLASMA IS GENERATED. NEXT, SUBSTANTIALLY ALL OF THE POLYSILICON FILM THAT IS UNPROTECTED IS ETCHED. THEN, A SILICON CONTAINING GAS IS INTRODUCED AND A REMAINDER OF THE POLYSILICON FILM IS ETCHED WHILE INTRODUCING A SILICON CONTAINING GAS. AN ETCH CHAMBER CONFIGURED TO INTRODUCE A SILICON CONTAINING GAS DURING AN ETCH PROCESS IS ALSO PROVIDED.