METHOD AND APPARATUS FOR PROCESSING WAFER SURFACES USING THIN, HIGH VELOCITY FLUID LAYER
AMONG THE MANY EMBODIMENT, IN ONE EMBODIMENT, A METHOD FOR PROCESSING A SUBSTRATE (108) IS DISCLOSED WHICH INCLUDES GENERATING A FLUID LAYER ON A SURFACE OF THE SUBSTRATE (108), THE FLUID LAYER DEFINING A FLUID MENISCUS (116). THE GENERATING INCLUDES MOVING A HEAD (106) IN PROXIMITY TO THE SURFACE,...
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Zusammenfassung: | AMONG THE MANY EMBODIMENT, IN ONE EMBODIMENT, A METHOD FOR PROCESSING A SUBSTRATE (108) IS DISCLOSED WHICH INCLUDES GENERATING A FLUID LAYER ON A SURFACE OF THE SUBSTRATE (108), THE FLUID LAYER DEFINING A FLUID MENISCUS (116). THE GENERATING INCLUDES MOVING A HEAD (106) IN PROXIMITY TO THE SURFACE, APPLYING A FLUID FROM THE HEAD (106) TO THE SURFACE WHILE THE HEAD (106) IS IN PROXIMITY TO THE SURFACE OF THE SUBSTRATE (108) TO DEFINE THE FLUID LAYER, AND REMOVING THE FLUID FROM THE SURFACE THROUGH THE PROXIMITY HEAD BY A VACUUM (312). THE FLUID TRAVELS ALONG THE FLUID LAYER BETWEEN THE HEAD (106) AND THE SUBSTRATE (108) AT A VELOCITY THAT INCREASES AS THE HEAD (106) IS IN CLOSER PROXIMITY TO THE SURFACE. |
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