TRENCH CUT LIGHT EMITTING DIODES AND METHODS OF FABRICATING SAME

TRENCH CUT LIGHT EMITTING DIODES AND METHODS OF FABRICATING SAME

A METHOD IS PROVIDED FOR FORMING SEMICONDUCTOR DEVICES USING A SEMICONDUCTOR SUBSTRATE HAVING FIRST AND SECOND OPPOSED SIDES, AND AT LEAST ONE DEVICE LAYER ON THE SECOND SIDE OF THE SUBSTRATE, THE AT LEAST ONE DEVICE LAYER INCLUDING FIRST AND SECOND DEVICE PORTION. A FIRST TRENCH IS FORMED IN THE FI...

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Bibliographische Detailangaben
Hauptverfasser: BRAD WILLIAMS, MICHAEL T. BRUHNS, JEFF LAHAYE, PETER ANDREWS
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A METHOD IS PROVIDED FOR FORMING SEMICONDUCTOR DEVICES USING A SEMICONDUCTOR SUBSTRATE HAVING FIRST AND SECOND OPPOSED SIDES, AND AT LEAST ONE DEVICE LAYER ON THE SECOND SIDE OF THE SUBSTRATE, THE AT LEAST ONE DEVICE LAYER INCLUDING FIRST AND SECOND DEVICE PORTION. A FIRST TRENCH IS FORMED IN THE FIRST SIDE OF THE SUBSTRATE BETWEEN THE FIRST AND SECOND DEVICE PORTIONS. A SECOND TRENCH IS FORMED IN THE SECOND SIDE OF THE SUBSTRATE BETWEEN THE FIRST AND SECOND DEVICE PORTIONS.