METHOD AND APPARATUS FOR SWITCHING AN OPTICAL BEAM BETWEEN FIRST AND SECOND WAVEGUIDES IN A SEMICONDUCTOR SUBSTRATE LAYER

METHOD AND APPARATUS FOR SWITCHING AN OPTICAL BEAM BETWEEN FIRST AND SECOND WAVEGUIDES IN A SEMICONDUCTOR SUBSTRATE LAYER

AN OPTICAL SWITCHING METHOD AND APPARATUS.IN ONE ASPECT OF THE PRESENT INVENTION,THE DISCLOSED APPARATUS INCLUDES FIRST AND OPTICAL WAVEGUIDES DISPOSED IN A SEMICONDUCTOR SUBSTRATE LAYER (103,203,303,403). AN INSULATING LAYER (109,209,309,409) DISPOSED BETWEEN THE FIRST AND SECOND WAVEGUIDES IN A CO...

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Bibliographische Detailangaben
1. Verfasser: NICOLAESCU, REMUS
Format: Patent
Sprache:eng
Schlagworte:
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Zusammenfassung:AN OPTICAL SWITCHING METHOD AND APPARATUS.IN ONE ASPECT OF THE PRESENT INVENTION,THE DISCLOSED APPARATUS INCLUDES FIRST AND OPTICAL WAVEGUIDES DISPOSED IN A SEMICONDUCTOR SUBSTRATE LAYER (103,203,303,403). AN INSULATING LAYER (109,209,309,409) DISPOSED BETWEEN THE FIRST AND SECOND WAVEGUIDES IN A COUPLING REGION (111) IN THE SEMICONDUCTOR SUBSTRATE LAYER (103, 203, 303,403) TO ISOLATE THE FIRST OPTICAL WAVEGUIDE (105, 205, 305, 405) FROM THE SECOND OPTICAL WAVEGUIDE (107, 207, 307, 407). MODULATED CHARGE LAYERS (227, 327, 427) PROXIMATE TO THE INSULATING LAYER (109, 209,309,409) IN THE COUPLING REGION (111) ARE EMPLOYED TO CONTROL AN OPTICAL COUPLING STRENGTH BETWEEN THE FIRST AND SECOND OPTICAL WAVEGUIDES.(FIG 2)