LINE SELECTED F2 TWO CHAMBER LASER SYSTEM

AN INJECTION SEEDED MODULAR GAS DISCHARGE LASER SYSTEM (2) CAPABLE OF PRODUCING HIGH QUALITY PULSED LASER BEAMS (50) AT PULSE RATES OF ABOUT 4,000 HZ OR GREATER AND AT PULSE ENERGIES OF ABOUT 5 MJ OR GREATER. TWO SEPARATE DISCHARGE CHAMBERS ARE PROVIDED, ONE OF WHICH IS A PART OF A MASTER OSCILLATOR...

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Hauptverfasser:	DANIEL J. BROWN, DAVID W. MYERS, SCOT T. SMITH, HERVE A.BESAUCELE, RICHARD M. NESS, GERMAN E. RYLOV, WILLIAM G. HULBURD, DAVID S. KNOWLES, IGOR V. FOMENKOV, ALEXANDER I. ERSHOV, RICHARD L. SANDSTROM, WILLIAM N. PARTLO, ECKHARD D. ONKELS, RICHARD C. UJAZDOWSKI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY COLORIMETRY DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	AN INJECTION SEEDED MODULAR GAS DISCHARGE LASER SYSTEM (2) CAPABLE OF PRODUCING HIGH QUALITY PULSED LASER BEAMS (50) AT PULSE RATES OF ABOUT 4,000 HZ OR GREATER AND AT PULSE ENERGIES OF ABOUT 5 MJ OR GREATER. TWO SEPARATE DISCHARGE CHAMBERS ARE PROVIDED, ONE OF WHICH IS A PART OF A MASTER OSCILLATOR (10) PRODUCING A VERY NARROW BAND SEED BEAM WHICH IS AMPLIFIED IN THE SECOND DISCHARGE CHAMBER (12). THE CHAMBERS CAN BE CONTROLLED SEPARATELY PERMITTING SEPARATE OPTIMIZATION OF WAVELENGTH PARAMETERS IN THE MASTER OSCILLATOR (10) AND OPTIMIZATION OF PULSE ENERGY PARAMETERS IN THE AMPLIFYING CHAMBER (12). A PREFERRED EMBODIMENT IN A F2 LASER SYSTEM CONFIGURED AS A MOPA AND SPECIFICALLY DESIGNED FOR USE AS A LIGHT SOURCE FOR INTEGRATED CIRCUIT LITHOGRAPHY. IN THE PREFERRED MOPA EMBODIMENT, EACH CHAMBER COMPRISES A SINGLE TANGENTIAL FAN (10A, 10) PROVIDING SUFFICIENT GAS FLOW TO PERMIT OPERATION AT PULSE RATES OF 4000 HZ OR GREATER BY CLEARING DEBRIS FROM THE DISCHARE REGION IN LESS TIME THAN THE APPROXIMATELY 0.25 MILISECONDS BETWEEN PULSES. THE MASTER OSCILLATOR (10) IS EQUIPPED WITH A LINE SELECTION PACKAGE FOR SELECTING THE STRONGEST F2 SPECTRAL LINE.(FIG 1)