SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

TO SUPPRESS FLOATING SUBSTRATE IN THE THIN SOI MOSFET FORMED ON THE SOI SUBSTRATE(120), THE GATE (ELECTRODE) HAS A TWO-LAYER STRUCTURE AND THE UPPER GATE (500) THEREOF IS IN CONTACT WITH THE SIDES OF THE SOI LAYER (SUBSTRATE).(FIG 2,3)

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Bibliographische Detailangaben
Hauptverfasser:	DAI HISAMOTO, YOSHIMI SUDOU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BOOK COVERS BOOKBINDING DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDEDFOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FILES LOOSE LEAVES MOVABLE-STRIP WRITING OR READING APPARATUS PERFORMING OPERATIONS PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITYFEATURES PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOTOTHERWISE PROVIDED FOR SEMICONDUCTOR DEVICES SPECIAL PRINTED MATTER TRANSPORTING
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Beschreibung
Zusammenfassung:	TO SUPPRESS FLOATING SUBSTRATE IN THE THIN SOI MOSFET FORMED ON THE SOI SUBSTRATE(120), THE GATE (ELECTRODE) HAS A TWO-LAYER STRUCTURE AND THE UPPER GATE (500) THEREOF IS IN CONTACT WITH THE SIDES OF THE SOI LAYER (SUBSTRATE).(FIG 2,3)