PHOTOMASK, METHOD OF GENERATING RESIST PATTERN, AND METHOD OF FABRICATING MASTER INFORMATION CARRIER

A RECESS (251) FOR DEAERATION IS FORMED IN THE SURFACE OF A RESIST FILM (2) BY USING THE PHOTOLITHOGRAPHY TECHNIQUE, A PHOTOMASK (3,3 1) IS ALLOWED TO COME INTO CONTACT WITH PROJECTIONS (252) FOR CLOSE CONTACT ON BOTH SIDES OR AROUND THE RECESS FOR DEAERATION, AND EVACUATION (7) IS PERFORMED VIA THE...

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Bibliographische Detailangaben
Hauptverfasser:	KEIZO MIYATA, NOBUYUKI KOMURA, TERUMI YANAGI, TATSUAKI ISHIDA
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Zusammenfassung:	A RECESS (251) FOR DEAERATION IS FORMED IN THE SURFACE OF A RESIST FILM (2) BY USING THE PHOTOLITHOGRAPHY TECHNIQUE, A PHOTOMASK (3,3 1) IS ALLOWED TO COME INTO CONTACT WITH PROJECTIONS (252) FOR CLOSE CONTACT ON BOTH SIDES OR AROUND THE RECESS FOR DEAERATION, AND EVACUATION (7) IS PERFORMED VIA THE RECESS FOR DEAERATION, THEREBY ENHANCING CLOSE CONTACT BETWEEN THE PHOTOMASK (3,31) AND THE PROJECTIONS (252) FOR CLOSE CONTACT. WITH THE CONFIGURATION, A RESIST PATTERN (21) HAVING AN ACCURATE RECESS (251,253) WHILE PREVENTING DIFFRACTION OF LIGHT IS FORMED. THE MOST ILLUSTRATIVE DRAWING IS