ELECTRONIC MAGNETORESISTIVE SENSOR BIASING

TO COMPENSATE CHANGE IN THE PHYSICAL CHARACTERISTIC OF A MAGNETORESISTIVE (MR) SENSOR AND THE PHYSICAL TOLERANCE DURING THE MANUFACTURE BY PROVIDING A BIAS CIRCUIT (IB) FOR GENERATING A BIAS CURRENT AND VOLTAGE (VH) FOR AN MR CONVERTER, A BIAS CIRCUIT 900 FOR IMPARTING A SPECIFIC BIAS POWER TO AN MR...

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Bibliographische Detailangaben
Hauptverfasser:	KLAAS BEREND KLAASSEN, JACOBUS VAN PEPPEN
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
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Beschreibung
Zusammenfassung:	TO COMPENSATE CHANGE IN THE PHYSICAL CHARACTERISTIC OF A MAGNETORESISTIVE (MR) SENSOR AND THE PHYSICAL TOLERANCE DURING THE MANUFACTURE BY PROVIDING A BIAS CIRCUIT (IB) FOR GENERATING A BIAS CURRENT AND VOLTAGE (VH) FOR AN MR CONVERTER, A BIAS CIRCUIT 900 FOR IMPARTING A SPECIFIC BIAS POWER TO AN MR HEAD IS PROVIDED WITH A CURRENT SINK FORMED BY AN AMPLIFIER 901, TRANSISTOR 902 AND A RESISTOR 903. THE OUTPUT CURRENT OF THE SINK IS PROPORTIONAL TO A HEAD VOLTAGE VH, WITH THE VOLTAGE VH VALUE AT BOTH ENDS OF THE MR HEAD (RH) CONNECTED BETWEEN BOTH ENDS OF THE SINK, CONTROLLING THE VALUE OF THE COLLECTOR CURRENT OF THE TRANSISTOR 902. IN THE METHOD OF SPECIFIC MR SENSOR/BIAS VOLTAGE, ONLY THE RESISTANCE RS OF THE ENTIRE MR HEAD RESISTANCE RH IS GIVEN A BIAS USING A SPECIFIC VOLTAGE. A SPECIFIC CURRENT DENSITY JS IS ATTAINED IN THE SENSOR OTHER THAN THE SPECIFIC TEMPERATURE RISE OF THE SENSOR IN THE AMBIENT TEMPERATURE OR ABOVE. IT IS ALSO IMPLEMENTED BY COMPENSATING NON-SENSOR RESISTANCE, LEAD RESISTANCE AND FRONT-LEAD RESISTANCE IN THE HEAD RESISTANCE.