SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME

SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME

A SEMICONDUCTOR DEVICE HAVING A HIGHLY RELIABLE GROOVE ISOLATION STRUCTURE WITH A DESIRED RADIUS OF CURVATURE FORMED AT THE GROOVE (4A) UPPER EDGE AND WITHOUT FORMATION OF ANY STEP, THERE IS PRODUCED BY REDUCING THE STRESS GENERATION AROUND THE GROOVE (4A) UPPER EDGE OF AN ELEMENT ISOLATION GROOVE (...

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Hauptverfasser: AKIRA TAKAMATSU, SHINICHI HORIBE, YASUKO YOSHIDA, HIROHIKO YAMAMOTO, TOSHIO NOZOE, KAZUSHI FUKUDA, NORIO SUZUKI, SHUJI IKEDA, HIROFUMI SHIMIZU, NORIO ISHITSUKA, MASAMICHI KOBAYASHI, YASUKO MATSUDA, HIDEO MIURA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A SEMICONDUCTOR DEVICE HAVING A HIGHLY RELIABLE GROOVE ISOLATION STRUCTURE WITH A DESIRED RADIUS OF CURVATURE FORMED AT THE GROOVE (4A) UPPER EDGE AND WITHOUT FORMATION OF ANY STEP, THERE IS PRODUCED BY REDUCING THE STRESS GENERATION AROUND THE GROOVE (4A) UPPER EDGE OF AN ELEMENT ISOLATION GROOVE (4) ON A SEMICONDUCTOR SUBSTRATE (1), THEREBY OPTIMIZING THE SHAPE OF AN ELEMENT ISOLATION GROOVE (4) AND MAKING THE DEVICE FINER AND IMPROVING THE DEVICE ELECTRIC CHARACTERISTICS.