HIGH EFFICIENCY SILICON DETECTOR FOR ULTRAVIOLET RADIATION BASED ON SILICON OXIDE ENRICHED WITH SILICON
Described is a high efficiency silicon detector for ultraviolet radiation based on silicon oxide enriched with silicon, which comprises a structure with a spectral width that operates in the ultraviolet region. Said detector is characterized in that it comprises a structure including a silicon photo...
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Format: | Patent |
Sprache: | eng ; spa |
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Zusammenfassung: | Described is a high efficiency silicon detector for ultraviolet radiation based on silicon oxide enriched with silicon, which comprises a structure with a spectral width that operates in the ultraviolet region. Said detector is characterized in that it comprises a structure including a silicon photodetector located in a visible parameter and an overlaying SRO film placed on said photodetector, said film being deposited by a CVD with a thickness of 550 nm, which may be or not super enriched with the addition of silicon (Si-SRO).
Detector de alta eficiencia en silicio para radiacion ultravioleta a base de oxido de silicio enriquecido con silicio, el cual comprende una estructura con un ancho espectral que opera en la region ultravioleta, caracterizado por una estructura conformada por un fotodetector de silicio en un parametro visible y sobrepuesto sobre el mismo una pelicula de SRO depositada por CVD de 550 nm de espesor y que posteriormente puede ser o no super enriquecido con implantacion de silicio (Si-SRO). |
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