LOW K DIELECTRIC COMPOSITIONS FOR HIGH FREQUENCY APPLICATIONS

A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material. The dielectric material can be fired below 950° C. or below 1100° C., has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. Th...

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Bibliographische Detailangaben
Hauptverfasser:	Ellen S. TORMEY, Cody J. GLEASON, Stanley WANG, Orville W. BROWN, Jackie D. DAVIS, Mohammed H. MEGHERHI, Yie-shein HER, John J. MALONEY, Peter MARLEY, David L. WIDLEWSKI, Thomas Joseph COFFEY, Srinivasan SRIDHARAN, George E. SAKOSKE
Format:	Patent
Sprache:	eng ; spa
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CABLES CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE CEMENTS CERAMICS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CONDUCTORS ELECTRICITY GLASS INSULATORS JOINING GLASS TO GLASS OR OTHER MATERIALS LIME, MAGNESIA MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES METALLURGY MINERAL OR SLAG WOOL REFRACTORIES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SLAG SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material. The dielectric material can be fired below 950° C. or below 1100° C., has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt % or 10-99 wt % silica powder and 5-90 wt % or 1-90 wt % glass component. The glass component includes 50-90 mole % SiO2, 5-35 mole % or 0.1-35 mole % B2O3, 0.1-10 mole % or 0.1-25 mole % Al2O3, 0.1-10 mole % K2O, 0.1-10 mole % Na2O, 0.1-20 mole % Li2O, 0.1-30 mole % F. The total amount of Li2O+Na2O+K2O is 0.1-30 mole % of the glass component. The silica powder can be amorphous or crystalline. Se presentan un material dieléctrico con valor de K bajo, valor de Q alto, cocción baja y un método para formar un material dieléctrico cocido. El material dieléctrico puede cocerse por debajo de los 950°C o por debajo de los 1100°C, tiene un valor K de menos de 8 a 10-30 Ghz y un valor Q mayor de 500 o mayor de 1000 a 10-30 Ghz. El material dieléctrico incluye, antes de cocerse, una parte de sólidos que incluye un 10-95 por peso% o 10-99 por peso% de polvo de sílice y 5-90 por peso% o 1-90 por peso% de componente de vidrio. El componente de vidrio incluye 50-90 mol% SiO2, 5-35 mol% o 0.1-35 mol% B2O3, 0.1-10 mol% o 0.1-25 mol% AI2O3, 0.1-10 mol% K2O, 0.1-10 mol% Na2O, 0.1-20 mol% Li2O, 0.1-30 mol% F. El monto total de Li2O + Na2O + K2O es 0.1-30 mol% del componente de vidrio. El polvo de sílice puede ser amorfo o cristalino.