Method for growth of n+-p-p+ InP structure for solar cells

The invention relates to semiconductor technology and can be used in solar radiation conversion devices.The method for growth of n+-p-p+ InP structure for solar cells comprises growth of epitaxial layer pInP on p+InP substrates with the crystallographic orientation (100), the disorientation of 3...5...

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Hauptverfasser:	BOTNARIUC Vasile, GORCEAC Leonid, COVAL Andrei, CINIC Boris, RAEVSCHI Simion, GAŞIN Petru
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Sprache:	eng ; rum ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F COMPOUNDS THEREOF ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SEMICONDUCTOR DEVICES
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creator	BOTNARIUC Vasile GORCEAC Leonid COVAL Andrei CINIC Boris RAEVSCHI Simion GAŞIN Petru
description	The invention relates to semiconductor technology and can be used in solar radiation conversion devices.The method for growth of n+-p-p+ InP structure for solar cells comprises growth of epitaxial layer pInP on p+InP substrates with the crystallographic orientation (100), the disorientation of 3...5° toward (110) and the charge carrier concentration of 1...3·1018 cm-3, growth of epitaxial layer n+InP and deposition of ohmic contacts. The n+InP layer is grown after the gas etching of the reactor and the epitaxial layer pInP. Invenţia se referă la tehnologia semiconductorilor şi poate fi utilizată la dispozitive de conversie a radiaţiei solare.Procedeul de creştere a structurii n+-p-p+InP pentru celule solare include creşterea stratului epitaxial pInP pe un substrat de p+InP cu orientarea cristalografică (100), dezorientarea de 3...5° în direcţia (110) şi concentraţia purtătorilor de sarcină de 1...3·1018 cm-3, creşterea stratului epitaxial de n+InP şi depunerea contactelor ohmice. Stratul n+InP este crescut după corodarea gazoasă a reactorului şi a stratului epitaxial de pInP. Изобретение относится к полупроводниковой технологии и может быть использовано в устройствах для преобразования солнечного излучения.Способ роста структуры n+-p-p+ InP для солнечных батарей включает рост эпитаксиального слоя pInP на подложках p+InP с кристаллографической ориентацией (100), дезориентацией 3...5° в сторону (110) и с концентрацией носителей заряда 1...3·1018 см-3, рост эпитаксиального слоя n+InP и нанасение омических контактов. Слой n+InP выращен после газового травления реактора и эпитаксиального слоя pInP.
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The n+InP layer is grown after the gas etching of the reactor and the epitaxial layer pInP. Invenţia se referă la tehnologia semiconductorilor şi poate fi utilizată la dispozitive de conversie a radiaţiei solare.Procedeul de creştere a structurii n+-p-p+InP pentru celule solare include creşterea stratului epitaxial pInP pe un substrat de p+InP cu orientarea cristalografică (100), dezorientarea de 3...5° în direcţia (110) şi concentraţia purtătorilor de sarcină de 1...3·1018 cm-3, creşterea stratului epitaxial de n+InP şi depunerea contactelor ohmice. Stratul n+InP este crescut după corodarea gazoasă a reactorului şi a stratului epitaxial de pInP. Изобретение относится к полупроводниковой технологии и может быть использовано в устройствах для преобразования солнечного излучения.Способ роста структуры n+-p-p+ InP для солнечных батарей включает рост эпитаксиального слоя pInP на подложках p+InP с кристаллографической ориентацией (100), дезориентацией 3...5° в сторону (110) и с концентрацией носителей заряда 1...3·1018 см-3, рост эпитаксиального слоя n+InP и нанасение омических контактов. 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The n+InP layer is grown after the gas etching of the reactor and the epitaxial layer pInP. Invenţia se referă la tehnologia semiconductorilor şi poate fi utilizată la dispozitive de conversie a radiaţiei solare.Procedeul de creştere a structurii n+-p-p+InP pentru celule solare include creşterea stratului epitaxial pInP pe un substrat de p+InP cu orientarea cristalografică (100), dezorientarea de 3...5° în direcţia (110) şi concentraţia purtătorilor de sarcină de 1...3·1018 cm-3, creşterea stratului epitaxial de n+InP şi depunerea contactelor ohmice. Stratul n+InP este crescut după corodarea gazoasă a reactorului şi a stratului epitaxial de pInP. Изобретение относится к полупроводниковой технологии и может быть использовано в устройствах для преобразования солнечного излучения.Способ роста структуры n+-p-p+ InP для солнечных батарей включает рост эпитаксиального слоя pInP на подложках p+InP с кристаллографической ориентацией (100), дезориентацией 3...5° в сторону (110) и с концентрацией носителей заряда 1...3·1018 см-3, рост эпитаксиального слоя n+InP и нанасение омических контактов. 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The n+InP layer is grown after the gas etching of the reactor and the epitaxial layer pInP. Invenţia se referă la tehnologia semiconductorilor şi poate fi utilizată la dispozitive de conversie a radiaţiei solare.Procedeul de creştere a structurii n+-p-p+InP pentru celule solare include creşterea stratului epitaxial pInP pe un substrat de p+InP cu orientarea cristalografică (100), dezorientarea de 3...5° în direcţia (110) şi concentraţia purtătorilor de sarcină de 1...3·1018 cm-3, creşterea stratului epitaxial de n+InP şi depunerea contactelor ohmice. Stratul n+InP este crescut după corodarea gazoasă a reactorului şi a stratului epitaxial de pInP. Изобретение относится к полупроводниковой технологии и может быть использовано в устройствах для преобразования солнечного излучения.Способ роста структуры n+-p-p+ InP для солнечных батарей включает рост эпитаксиального слоя pInP на подложках p+InP с кристаллографической ориентацией (100), дезориентацией 3...5° в сторону (110) и с концентрацией носителей заряда 1...3·1018 см-3, рост эпитаксиального слоя n+InP и нанасение омических контактов. Слой n+InP выращен после газового травления реактора и эпитаксиального слоя pInP.</abstract><oa>free_for_read</oa></addata></record>
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title	Method for growth of n+-p-p+ InP structure for solar cells
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