DEPOSITION METHOD OF A THIN MULTILAYER DIELECTRIC

Invention relates to a method for fabrication of multilayer thin dielectric. Multilayer dielectric is formated by deposition of several layers of the same chemical composition on top of each other. At least two layers of Si3N4 are deposited on top of each other using chemical vapor deposition method...

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Bibliographische Detailangaben
Hauptverfasser:	DEHTJARS, Jurijs, ROMANOVA, Marina, AVOTIŅA, Līga, JEŅIČEKS, Genādijs, ZASLAVSKIS, Aleksandrs
Format:	Patent
Sprache:	eng ; lav
Schlagworte:	BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Invention relates to a method for fabrication of multilayer thin dielectric. Multilayer dielectric is formated by deposition of several layers of the same chemical composition on top of each other. At least two layers of Si3N4 are deposited on top of each other using chemical vapor deposition method in a chemical reaction between two gaseous reactants, wherein one reactant is a Si-containing gas and the other reactant is NH3 gas. After depositon of the first layer supply of Si-containing gas has been stopped and annealing the surface of the deposited layer is carried out at the temperature of 700-8000C in a flow of NH3 gas. The method prevents formation of pinhole defects in dielectric layers. Izgudrojums attiecas uz plānu daudzslāņu dielektriķu izgatavošanu no Si3N4 materiāla. Metode paredz vairāku vienāda ķīmiskā sastāva slāņu uzklāšanu vienu uz otra. Katrs nākamais slānis aizklāj iepriekšējā slāņa caurumdefektus. Si3N4 slāņus nogulsnē, izmantojot ķīmiskās tvaiku nogulsnēšanas paņēmienu, kurā notiek ķīmiska reakcija starp divām gāzveida izejvielām. Viena izejviela ir Si saturoša gāze, bet otra - NH3 gāze. Pēc katra slāņa nogulsnēšanas aptur Si saturošās gāzes padevi un veic nogulsnētā slāņa virsmas atkvēlināšanu 700-8000C temperatūrā NH3 gāzes plūsmā. Metode nodrošina caurumdefektu novēršanu.