METHOD FOR THE OXIDATION OF CYCLOHEXANE UNDER PHOTOTHERMAL CONDITIONS USING HETEROATOM ZEOLITE-SUPPORTED SEMICONDUCTOR MATERIALS

The invention discloses a method for the oxidation of cyclohexane under photothermal conditions using heteroatom zeolite-supported semiconductor materials, comprising the following steps: Step 1, zeolite preparation; Step 2, composite preparation; Step 3, catalyst preparation; Step 4, reactor preparation; Step 5, oxidation reaction; Step 6, product separation; Step 7, catalyst recovery. Inthis invention, one of titanium dioxide, tin oxide, cuprous oxide, or zinc oxide is selected as a composite material to combine with heteroatom zeolite, improving the crystal structure of the material, optimizing the catalytic performance, and enhancing the oxidation reaction rate of cyclohexane in the later stage. By adding a photosensitizer, the photoreactive rate of the material is increased, accelerating the separation efficiency of photogenerated electron-hole pairs and improving the utilization rate of raw materials. Before using the heteroatom zeolite, the zeolite is sieved, washed, and activated to remove impurities, avoiding the generation of extra products during the oxidation reaction and ensuring the purity of the post-reaction products.