SINGLE CRYSTAL GROWTH METHOD FOR LARGE-SIZE CESIUM IODIDE CRYSTAL AND DESCENDING FURNACE

SINGLE CRYSTAL GROWTH METHOD FOR LARGE-SIZE CESIUM IODIDE CRYSTAL AND DESCENDING FURNACE

The present invention discloses a single crystal growth method for a large-size cesium iodide crystal and a descending furnace. A crucible filled with raw materials is placed on a head dissipation device. In a first stage of crystal growth, heat of a core part of the crystal is led out by a water ci...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHEN Zebang, CAI Jieyi, ZHANG Binjing, KONG Shuyan
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:The present invention discloses a single crystal growth method for a large-size cesium iodide crystal and a descending furnace. A crucible filled with raw materials is placed on a head dissipation device. In a first stage of crystal growth, heat of a core part of the crystal is led out by a water circulation assembly in the heat dissipation apparatus, such that the core part of the crystal is promoted to be first nucleated and crystallized, and a solid-liquid interface of the crystal forms a micro-convex shape, thereby facilitating single crystal growth and impurity removal of the crystal. In a second stage of crystal growth, a heat dissipation rate during crystallization is further increased by an air circulation assembly in the heat dissipation apparatus, such that the heat is led out from the core part as much as possible, and improves the quality and performance of the crystal.