THIN FILM TRANSISTOR & METHOD OF MANUFACTURING THE SAME

THIN FILM TRANSISTOR & METHOD OF MANUFACTURING THE SAME

The method includes the steps of forming a gate electrode on a substrate, and forming a gate insulating film, a semiconductor layer, an ohmic contact layer and a source/drain electrode, and removing the ohmic contact layer which is not contacted with the source/drain electrode by anode oxidation, an...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: BAE, BYUNG-SUNG
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The method includes the steps of forming a gate electrode on a substrate, and forming a gate insulating film, a semiconductor layer, an ohmic contact layer and a source/drain electrode, and removing the ohmic contact layer which is not contacted with the source/drain electrode by anode oxidation, and in addition, includes the step of forming an oxidation stopper with an insulating material before the formation of the ohmic contact layer in order to preventing the anode oxidation from proceeding downward the ohmic contact layer.