SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
(a) The passivation layer(203) containing the opening part exposing the bonding pad(202) bare on the semiconductor substrate(201) is formed and the polyamide layer(204A) and the photoresist mask pattern(205) is formed in regular order thereon. (b) The bonding pad is exposed by selectively etching of...
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| Zusammenfassung: | (a) The passivation layer(203) containing the opening part exposing the bonding pad(202) bare on the semiconductor substrate(201) is formed and the polyamide layer(204A) and the photoresist mask pattern(205) is formed in regular order thereon. (b) The bonding pad is exposed by selectively etching of the polyamide layer(204A), then the photoresist mask pattern is removed. (c) After the polyamide layer(206A) is formed on the overall surface, the photoresist mask pattern(207) is formed. (d) The bonding pad is bared by etching the polyamide layer(206A) selectively, then the photoresist mask pattern(207) is removed.
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