CONTACT HALL FORMING METHOD
A forming method of contact holes having narrow width is provied to enhance reliability using slope etching. The method comprises the steps of: forming a mask pattern(4) for contact etching; firstly etching an insulating layer(3) by dry-etch process using CHF3 and O2 gas to form a slope etched profi...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A forming method of contact holes having narrow width is provied to enhance reliability using slope etching. The method comprises the steps of: forming a mask pattern(4) for contact etching; firstly etching an insulating layer(3) by dry-etch process using CHF3 and O2 gas to form a slope etched profile due to polymer(11); and secondly etching the remained insulating layer(3) by anisotropic etching to form slope contact hole. Thereby, it is possible to easily form fine contact holes having sub-micron scale without additional expensive apparatus and sophisticated process. |
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