CAPACITOR MANUFACTURE METHOD OF HIGH INTEGRATED SEMICONDUCTOR DEVICE
forming a storage electrode poly(9) connected to a semiconductor substrate; depositing a thin oxide film(10); forming a rugged oxide film(10) by etching the thin oxide film(10); forming a ruggedness on the surface of the storage electrode poly(9) by etching the storage electrode poly(9) using the ru...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | forming a storage electrode poly(9) connected to a semiconductor substrate; depositing a thin oxide film(10); forming a rugged oxide film(10) by etching the thin oxide film(10); forming a ruggedness on the surface of the storage electrode poly(9) by etching the storage electrode poly(9) using the rugged oxide film(10) as a mask; and forming a storage electrode by an etching process using a storage electrode mask(8). |
|---|