METHOD FOR MAKING A CAPACITOR IN SEMICONDUCTOR MEMORY DEVICE

forming the first polysilicon film(25) for a storage node on an interfacial insulator(24); forming the first photoresist pattern(26) on the first polysilicon film(25); forming a polymer(29) on the side wall of the photoresist pattern to remove the photoresist pattern to leave the polymer(29); forming the second polysilicon film(30) on the entire surface to form the second plolysilicon spacer pattern(30a) on the revealed side wall of the polymer by anisotropic etching of the second polysilicon film(30); forming a contact hole by etching the revealed interfacial insulator(24); forming the third polysilicon film(27) for a storage node; and etching the third polysilicon film(27) and the first polysilicon film(25) using the storage node mask.