MANUFACTURING METHOD FOR MOS TRANSISTOR

MANUFACTURING METHOD FOR MOS TRANSISTOR

depositing the first insulator(203) on top of a SOI(Silicon On Insulator) substrate(202); forming a trench(204) by etching the first insulator(203) corresponding to a channel-forming region(202C) selectively; an ion-implantation to form a source/drain region(202A,202B) on the silicon region except t...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: PARK, KYUAN
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:depositing the first insulator(203) on top of a SOI(Silicon On Insulator) substrate(202); forming a trench(204) by etching the first insulator(203) corresponding to a channel-forming region(202C) selectively; an ion-implantation to form a source/drain region(202A,202B) on the silicon region except the channel-forming region(202C); forming the second insulator used as a gate insulator on the channel-forming region; and forming metal layers(207,208) used as a gate electrode in the trench(204).