PIN TYPE STORAGE CAPACITOR

etching a BPSG film(2) isotropically using a first contact mask(8); depositing a first TEOS film(3), a first polysilicon film(4), a second TEOS film(5), a second polysilicon film(6) and a third TEOS film(7) on the BPSG film(2); forming a charge storage electrode mask(10) after forming a contact hole and depositing a third polysilicon film(9); dry etching the third polysilicon film, the third TEOS film, the second polysilicon film, the second TEOS film, and the first polysilicon film using the above mask(10); wet etching TEOS films(5,7,3) after removing the charge storage electrode mask(10).