METAL PLANERIZING METHOD OF SEMICONDUCTOR DEVICE

METAL PLANERIZING METHOD OF SEMICONDUCTOR DEVICE

forming a seed layer by executing the first sputtering process and by locating a wafer with a constant interval above the heater for lowering the temperature of the wafer less than that of the heater in the reaction chamber having the heater; forming flattening layer on the wafer by executing sputte...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: KWAK, BYUNG - HO
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:forming a seed layer by executing the first sputtering process and by locating a wafer with a constant interval above the heater for lowering the temperature of the wafer less than that of the heater in the reaction chamber having the heater; forming flattening layer on the wafer by executing sputtering process and by locating the wafer on the heater for maintaining the temperature of the wafer and heater.