INSB THIN FILM MANUFACTURING METHOD FOR HALL DEVICE
The method comprises the steps of removing an InSb film on a substrate; coating the film with a protecting film like In2O3 or SiOx; keeping it at a temperature 540-560 deg.C for 3 minutes; and cooling it.
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | The method comprises the steps of removing an InSb film on a substrate; coating the film with a protecting film like In2O3 or SiOx; keeping it at a temperature 540-560 deg.C for 3 minutes; and cooling it. |
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