ALGAAS/GAAS HETERO-JUNCTION BIPOLAR TR. AND ITS MAKING METHOD

ALGAAS/GAAS HETERO-JUNCTION BIPOLAR TR. AND ITS MAKING METHOD

The method reduces the surface recombination of base current by forming a guiding layer of a precise thickness. The method comprises the steps of: forming an emitter mesa struture of n+-type GaAs layer on the n--type AlGaAs layer; forming a base mesa structure of p+-type GaAs layer on the n--type Ga...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KANG, SANG - WON, LEE, HONG - SU, KU, JIN - KUN, LEE, SONG - HYON
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The method reduces the surface recombination of base current by forming a guiding layer of a precise thickness. The method comprises the steps of: forming an emitter mesa struture of n+-type GaAs layer on the n--type AlGaAs layer; forming a base mesa structure of p+-type GaAs layer on the n--type GaAs layer; and including an AlGaAs guiding layer (12) which is formed by the implantation of aluminum into the surface of the base mesa structure.