INSB THINFILM MANUFACTURING METHOD FOR HALL DEVICE
The method includes the steps of forming a SiO insulating layer on a Ni-Zn ferrite substrate 1 by sputtering, alternately depositing an antimon and indium on the insulating layer to form antimony indium thin film 3, forming a protection layer 4 on the antimony indium thin film, performing heat treat...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | The method includes the steps of forming a SiO insulating layer on a Ni-Zn ferrite substrate 1 by sputtering, alternately depositing an antimon and indium on the insulating layer to form antimony indium thin film 3, forming a protection layer 4 on the antimony indium thin film, performing heat treatment to induce mutual diffusion of antimony and indium, thereby obtaining antimonic indium thin film having uniform characteristics. |
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