STRUCTURE OF STACKED TRENCH CAPACITOR AND FABRICATING METHOD THEREOF
Structure of stack trench capacitor formed by rounding the bottom portion of said trench and forming a multi-insulating layer by oxidizing polysilicone prevents current leakage.
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng ; kor |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | Structure of stack trench capacitor formed by rounding the bottom portion of said trench and forming a multi-insulating layer by oxidizing polysilicone prevents current leakage. |
|---|