SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

The invention is a procedure for fabricating a variety of devices including MISFETs, MESFETs and JFETs, and includes doping by ion implantation epitaxial layers of semi-insulating InP grown by MOCVD on conducting InP wafers. Such layers make excellent substrates for III-V semiconductor devices. Part...

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Bibliographische Detailangaben
Hauptverfasser:	SCHWARTZ BERTRAM, JOHNSTON WILBUR D. JR, LONG JUDITH A, MACRANDER ALBERT T, SINGH SMOBHA
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The invention is a procedure for fabricating a variety of devices including MISFETs, MESFETs and JFETs, and includes doping by ion implantation epitaxial layers of semi-insulating InP grown by MOCVD on conducting InP wafers. Such layers make excellent substrates for III-V semiconductor devices. Particularly appealing is the low defect density obtained because of the conducting InP wafers and excellent insulating characteristics of the semi-insulating InP layer.