SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

The film of polycrystalline silicon is formed by chemical vapour deposition, using a high concn. of phosphorous ions. The surface of the film is heated in pure ammonia gas for five minutes at a temp. of 700 deg.C to provide the film of silicon nitride which is about two nanometres in thickness. The...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HORIE HIROSHI, SUGI TOSHIHIRO, ITO TAKASI
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The film of polycrystalline silicon is formed by chemical vapour deposition, using a high concn. of phosphorous ions. The surface of the film is heated in pure ammonia gas for five minutes at a temp. of 700 deg.C to provide the film of silicon nitride which is about two nanometres in thickness. The film of molybdenum is then formed on the silicon nitride by sputtering or chemical vapour deposition, to a thickness of 0.3 micron. The molybdenum is then heated to 1000 deg.C to increase its density which decreases its resistivity.