SEMICONDUCTOR MANUFACTURING METHOD

SEMICONDUCTOR MANUFACTURING METHOD

growing thermal oxide film (21) on the top of the N-type epitaxial layer and forming the pattern of intrinsic base region (22) and extrinsic base region (23), respectively, by photograph and injecting P-type impurity into them ; Spreading said substrate with an oxide layer and etching only (4) and t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LEE HYONG-KUN, LEE SON-DONG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:growing thermal oxide film (21) on the top of the N-type epitaxial layer and forming the pattern of intrinsic base region (22) and extrinsic base region (23), respectively, by photograph and injecting P-type impurity into them ; Spreading said substrate with an oxide layer and etching only (4) and the upper layer of (23) and forming the second intrinsic base region (25) and extrinsic base region (26) by thermal diffusion ; forming the pattern of nitride film (27) and opening collector and emitter window by using (21) and forming collector region (29) and emitter region (30) by N-type polysilicon film (28) ; opening the electrode window of (26) and forming emitter electrode (31), base electrodes (32),(33), and collector electrode (34).