수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스

폴리이미드 또는 폴리이미드 전구체를 포함하는 수지 조성물로서, 상기 수지 조성물로부터 얻어진 경화물이 하기 조건 (i)~(iv)의 모두를 충족시키는 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스; 조건 (i): 상기 경화물의 영률이 3.5GPa 이상, 조건 (ii): 상기 경화물의 25℃부터 125℃까지의 온도 범위에 있어서의 열팽창 계수가 50ppm/℃ 미만, 조건 (iii): 상기 경화물의 Tg가 240℃ 이상, 조건 (iv): 상기 경화물의 파단...

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Hauptverfasser: NOZAKI ATSUYASU, OGAWA MICHIHIRO, OOTA KAZUYA, DAIKUHARA KENJI
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OGAWA MICHIHIRO
OOTA KAZUYA
DAIKUHARA KENJI
description 폴리이미드 또는 폴리이미드 전구체를 포함하는 수지 조성물로서, 상기 수지 조성물로부터 얻어진 경화물이 하기 조건 (i)~(iv)의 모두를 충족시키는 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스; 조건 (i): 상기 경화물의 영률이 3.5GPa 이상, 조건 (ii): 상기 경화물의 25℃부터 125℃까지의 온도 범위에 있어서의 열팽창 계수가 50ppm/℃ 미만, 조건 (iii): 상기 경화물의 Tg가 240℃ 이상, 조건 (iv): 상기 경화물의 파단 신도가 40% 이상. Provided are: a resin composition including a polyimide or a polyimide precursor, wherein a cured product obtained from the resin composition satisfies all of the following conditions (i) to (iv); a cured product; a laminate; a method for producing cured product; a method for producing a laminate; a method for producing a semiconductor device; and a semiconductor device; condition (i): Young's modulus of the cured product is 3.5 GPa or more, condition (ii): the coefficient of thermal expansion of the cured product in the temperature range from 25°C up to 125°C is less than 50 ppm/°C, condition (iii): the Tg of the cured product is 240°C or higher, and condition (iv): the elongation at break of the cured product is 40% or higher.
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Provided are: a resin composition including a polyimide or a polyimide precursor, wherein a cured product obtained from the resin composition satisfies all of the following conditions (i) to (iv); a cured product; a laminate; a method for producing cured product; a method for producing a laminate; a method for producing a semiconductor device; and a semiconductor device; condition (i): Young's modulus of the cured product is 3.5 GPa or more, condition (ii): the coefficient of thermal expansion of the cured product in the temperature range from 25°C up to 125°C is less than 50 ppm/°C, condition (iii): the Tg of the cured product is 240°C or higher, and condition (iv): the elongation at break of the cured product is 40% or higher.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFjypmPGm-UNCm8WbnjTsvH1mj06Cq827X07cwqY-WZB45sdW99s2oIk-mbuDKD4HKAGhdcbVr7eNBVJGRa51xtmvO5vAcopvJ4y5fWGKW_mbnnTtQSrwn5cqnkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSbx3kJGBkYmBoamZmaGlozFxqgDpeYTF</recordid><startdate>20241030</startdate><enddate>20241030</enddate><creator>NOZAKI ATSUYASU</creator><creator>OGAWA MICHIHIRO</creator><creator>OOTA KAZUYA</creator><creator>DAIKUHARA KENJI</creator><scope>EVB</scope></search><sort><creationdate>20241030</creationdate><title>수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스</title><author>NOZAKI ATSUYASU ; OGAWA MICHIHIRO ; OOTA KAZUYA ; DAIKUHARA KENJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20240156619A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>kor</language><creationdate>2024</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><toplevel>online_resources</toplevel><creatorcontrib>NOZAKI ATSUYASU</creatorcontrib><creatorcontrib>OGAWA MICHIHIRO</creatorcontrib><creatorcontrib>OOTA KAZUYA</creatorcontrib><creatorcontrib>DAIKUHARA KENJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NOZAKI ATSUYASU</au><au>OGAWA MICHIHIRO</au><au>OOTA KAZUYA</au><au>DAIKUHARA KENJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스</title><date>2024-10-30</date><risdate>2024</risdate><abstract>폴리이미드 또는 폴리이미드 전구체를 포함하는 수지 조성물로서, 상기 수지 조성물로부터 얻어진 경화물이 하기 조건 (i)~(iv)의 모두를 충족시키는 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스; 조건 (i): 상기 경화물의 영률이 3.5GPa 이상, 조건 (ii): 상기 경화물의 25℃부터 125℃까지의 온도 범위에 있어서의 열팽창 계수가 50ppm/℃ 미만, 조건 (iii): 상기 경화물의 Tg가 240℃ 이상, 조건 (iv): 상기 경화물의 파단 신도가 40% 이상. Provided are: a resin composition including a polyimide or a polyimide precursor, wherein a cured product obtained from the resin composition satisfies all of the following conditions (i) to (iv); a cured product; a laminate; a method for producing cured product; a method for producing a laminate; a method for producing a semiconductor device; and a semiconductor device; condition (i): Young's modulus of the cured product is 3.5 GPa or more, condition (ii): the coefficient of thermal expansion of the cured product in the temperature range from 25°C up to 125°C is less than 50 ppm/°C, condition (iii): the Tg of the cured product is 240°C or higher, and condition (iv): the elongation at break of the cured product is 40% or higher.</abstract><oa>free_for_read</oa></addata></record>
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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
ELECTROGRAPHY
HOLOGRAPHY
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
MATERIALS THEREFOR
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
THEIR PREPARATION OR CHEMICAL WORKING-UP
title 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스
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