수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스
폴리이미드 또는 폴리이미드 전구체를 포함하는 수지 조성물로서, 상기 수지 조성물로부터 얻어진 경화물이 하기 조건 (i)~(iv)의 모두를 충족시키는 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스; 조건 (i): 상기 경화물의 영률이 3.5GPa 이상, 조건 (ii): 상기 경화물의 25℃부터 125℃까지의 온도 범위에 있어서의 열팽창 계수가 50ppm/℃ 미만, 조건 (iii): 상기 경화물의 Tg가 240℃ 이상, 조건 (iv): 상기 경화물의 파단...
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creator | NOZAKI ATSUYASU OGAWA MICHIHIRO OOTA KAZUYA DAIKUHARA KENJI |
description | 폴리이미드 또는 폴리이미드 전구체를 포함하는 수지 조성물로서, 상기 수지 조성물로부터 얻어진 경화물이 하기 조건 (i)~(iv)의 모두를 충족시키는 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스; 조건 (i): 상기 경화물의 영률이 3.5GPa 이상, 조건 (ii): 상기 경화물의 25℃부터 125℃까지의 온도 범위에 있어서의 열팽창 계수가 50ppm/℃ 미만, 조건 (iii): 상기 경화물의 Tg가 240℃ 이상, 조건 (iv): 상기 경화물의 파단 신도가 40% 이상.
Provided are: a resin composition including a polyimide or a polyimide precursor, wherein a cured product obtained from the resin composition satisfies all of the following conditions (i) to (iv); a cured product; a laminate; a method for producing cured product; a method for producing a laminate; a method for producing a semiconductor device; and a semiconductor device; condition (i): Young's modulus of the cured product is 3.5 GPa or more, condition (ii): the coefficient of thermal expansion of the cured product in the temperature range from 25°C up to 125°C is less than 50 ppm/°C, condition (iii): the Tg of the cured product is 240°C or higher, and condition (iv): the elongation at break of the cured product is 40% or higher. |
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Provided are: a resin composition including a polyimide or a polyimide precursor, wherein a cured product obtained from the resin composition satisfies all of the following conditions (i) to (iv); a cured product; a laminate; a method for producing cured product; a method for producing a laminate; a method for producing a semiconductor device; and a semiconductor device; condition (i): Young's modulus of the cured product is 3.5 GPa or more, condition (ii): the coefficient of thermal expansion of the cured product in the temperature range from 25°C up to 125°C is less than 50 ppm/°C, condition (iii): the Tg of the cured product is 240°C or higher, and condition (iv): the elongation at break of the cured product is 40% or higher.</description><language>kor</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CHEMISTRY ; CINEMATOGRAPHY ; COMPOSITIONS BASED THEREON ; ELECTROGRAPHY ; HOLOGRAPHY ; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS ; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS ; MATERIALS THEREFOR ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241030&DB=EPODOC&CC=KR&NR=20240156619A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241030&DB=EPODOC&CC=KR&NR=20240156619A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NOZAKI ATSUYASU</creatorcontrib><creatorcontrib>OGAWA MICHIHIRO</creatorcontrib><creatorcontrib>OOTA KAZUYA</creatorcontrib><creatorcontrib>DAIKUHARA KENJI</creatorcontrib><title>수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스</title><description>폴리이미드 또는 폴리이미드 전구체를 포함하는 수지 조성물로서, 상기 수지 조성물로부터 얻어진 경화물이 하기 조건 (i)~(iv)의 모두를 충족시키는 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스; 조건 (i): 상기 경화물의 영률이 3.5GPa 이상, 조건 (ii): 상기 경화물의 25℃부터 125℃까지의 온도 범위에 있어서의 열팽창 계수가 50ppm/℃ 미만, 조건 (iii): 상기 경화물의 Tg가 240℃ 이상, 조건 (iv): 상기 경화물의 파단 신도가 40% 이상.
Provided are: a resin composition including a polyimide or a polyimide precursor, wherein a cured product obtained from the resin composition satisfies all of the following conditions (i) to (iv); a cured product; a laminate; a method for producing cured product; a method for producing a laminate; a method for producing a semiconductor device; and a semiconductor device; condition (i): Young's modulus of the cured product is 3.5 GPa or more, condition (ii): the coefficient of thermal expansion of the cured product in the temperature range from 25°C up to 125°C is less than 50 ppm/°C, condition (iii): the Tg of the cured product is 240°C or higher, and condition (iv): the elongation at break of the cured product is 40% or higher.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFjypmPGm-UNCm8WbnjTsvH1mj06Cq827X07cwqY-WZB45sdW99s2oIk-mbuDKD4HKAGhdcbVr7eNBVJGRa51xtmvO5vAcopvJ4y5fWGKW_mbnnTtQSrwn5cqnkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSbx3kJGBkYmBoamZmaGlozFxqgDpeYTF</recordid><startdate>20241030</startdate><enddate>20241030</enddate><creator>NOZAKI ATSUYASU</creator><creator>OGAWA MICHIHIRO</creator><creator>OOTA KAZUYA</creator><creator>DAIKUHARA KENJI</creator><scope>EVB</scope></search><sort><creationdate>20241030</creationdate><title>수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스</title><author>NOZAKI ATSUYASU ; OGAWA MICHIHIRO ; OOTA KAZUYA ; DAIKUHARA KENJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20240156619A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>kor</language><creationdate>2024</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><toplevel>online_resources</toplevel><creatorcontrib>NOZAKI ATSUYASU</creatorcontrib><creatorcontrib>OGAWA MICHIHIRO</creatorcontrib><creatorcontrib>OOTA KAZUYA</creatorcontrib><creatorcontrib>DAIKUHARA KENJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NOZAKI ATSUYASU</au><au>OGAWA MICHIHIRO</au><au>OOTA KAZUYA</au><au>DAIKUHARA KENJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스</title><date>2024-10-30</date><risdate>2024</risdate><abstract>폴리이미드 또는 폴리이미드 전구체를 포함하는 수지 조성물로서, 상기 수지 조성물로부터 얻어진 경화물이 하기 조건 (i)~(iv)의 모두를 충족시키는 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스; 조건 (i): 상기 경화물의 영률이 3.5GPa 이상, 조건 (ii): 상기 경화물의 25℃부터 125℃까지의 온도 범위에 있어서의 열팽창 계수가 50ppm/℃ 미만, 조건 (iii): 상기 경화물의 Tg가 240℃ 이상, 조건 (iv): 상기 경화물의 파단 신도가 40% 이상.
Provided are: a resin composition including a polyimide or a polyimide precursor, wherein a cured product obtained from the resin composition satisfies all of the following conditions (i) to (iv); a cured product; a laminate; a method for producing cured product; a method for producing a laminate; a method for producing a semiconductor device; and a semiconductor device; condition (i): Young's modulus of the cured product is 3.5 GPa or more, condition (ii): the coefficient of thermal expansion of the cured product in the temperature range from 25°C up to 125°C is less than 50 ppm/°C, condition (iii): the Tg of the cured product is 240°C or higher, and condition (iv): the elongation at break of the cured product is 40% or higher.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP |
title | 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스 |
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